SiO<sub>2</sub>掺杂99BeO陶瓷的微观结构与性能

SiO₂掺杂99BeO陶瓷的微观结构与性能

详细信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2. No. 799 State-owned Factory, Yibin 644001, China

摘要: 采用固相法制备99BeO陶瓷样品,系统研究了SiO₂掺杂对99BeO高导热陶瓷微观结构及性能的影响。研究发现,随着SiO₂含量的增加,99BeO陶瓷的抗折强度、密度、导热率以及电学性能均呈较明显的单峰分布。当SiO₂掺杂量为0.8%(w)时,可获得性能优良、结构致密的高导热陶瓷,其抗折强度为248 MPa,密度为2.957 g/cm³,导热率为303 W/(m.K)。
- 高导热 /
- SiO₂掺杂 /
- 99BeO陶瓷
Abstract: Effects of SiO₂^- content on microstructure and properties of high pure beryllium oxide high thermal conductive ceramic prepared by solid state react method were investigated.The results revealed that with the increase of SiO₂ content,flexural strength,density,thermal conductivity and electric properties increases first and then slightly decreases.The sample with 0.8% SiO₂(mass faction)have excellent properties and denser microstructure,with the flexural strength of 248 MPa,density of 2.957 g/cm³,the thermal conductivity of 303 W/(m·K).
- High thermal conductivity /
- SiO₂-doped /
- Beryllium oxide