Structural Characteristics of HfSiON High-k Dielectrics Films Grown by Radio Frequency Magnetron Sputtering
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摘要: 在室温下,采用射频磁控溅射法在p型Si(111)衬底上制备了HfSiON高k栅介质薄膜。用X射线光电子能谱(XPS)分析了HfSiON薄膜的成分,用掠入射X射线衍射(XRD)检测了薄膜的结构,用高分辨率扫描电子显微镜(HRSEM)、原子力显微镜(AFM)观察了薄膜断面和表面形貌。XRD谱显示,HfSiON薄膜经900℃高温退火处理后仍为非晶态。HRSEM断面和AFM形貌像显示所制备的薄膜具有非常平整的表面,表明薄膜具有优良的热稳定性。电学测试表明,HfSiON薄膜具有较好的介电特性,其介电常数较高为18.9,漏电流密度较低在+1.5V为2.5×10-7A/cm2。这些特性表明HfSiON薄膜是一种很有希望替代SiO2的新型高k栅介质材料,同时也表明射频磁控溅射法是一种制备HfSiON新型高k栅介质薄膜的有效方法。Abstract: Novel HfSiON thin films were prepared on p-type Si substrates by using radio-frequency magnetron sputtering deposition.Composition and structure of the films is determined by means of XPS and XRD respectively.High resolution scanning electron microscope(HRSEM) and atomic force microscope(AFM) have been empoled to observe the cross-section and the surface morphology of the thin films.XRD analyses show that the films are amorphous even after annealed at 900℃.The results of HRSEM and AFM present that the films have very flat surface,indicating a good thermal stability.HfSiON films have excellent dielectric properties with high dielectric constant k of about 18.9 and low leakage current of 2.5×10-7 A/cm2 at Vg of +1.5V. All the characteristics show that HfSiON films will be a promising candidate for SiO2 gate dielectric and it also indicates that radio frequency magnetron sputtering is a good way to deposit HfSiON high-k thin films as dielectric.
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Keywords:
- Radio frequency magnetron sputtering /
- HfSiON films /
- High-k /
- Dielectric
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