电弧气化法制备纳米ITO粉末及高密度ITO靶的研制

Preparation of ITO Nano Powder by Arc Evaporating and Development of Ultra High Density ITO Target

    摘要
  • 摘要: 以纯度为99.99%的纯金属In和Sn为原料,采用电弧气化法制备了单一立方In2O3结构的纳米ITO合金粉末,所制备的粉末以四方和类球形两种形貌存在,粒度主要位于30~70nm,分散性良好;并在此基础上采用常压烧结制备了相对密度高达99.74%,平均电阻率达到1.52×10-4Ω.cm,结构成份均匀,晶粒尺寸5~10μm左右的超高密度ITO靶材。

     

    Abstract: ITO nano-powders was prepared by arc evaporating with 99.99% In and Sn as raw materials.The prepared powder has single cubic In2O3 phase in tetragonal and near-sphere pattern.The particle size of the powder is 30~70nm and the dispersity of the powder is good.ITO target with grain size of 5~10μm was prepared with the powder by non-pressure sintering.The ITO target has a homogeneous structure,a relative density of 99.74%,and a average resistivity of 1.52×10-4Ω·cm.

     

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