Microstructure and Mechanical Properties of ZrO2 Thin Films Prepared in Vacuum Cathodic Arc Deposition by Using a Positively Biased Electrode
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摘要: 在氧气和氩气的混合气体中, 以O2/Ar流量比固定为1/4的条件, 通过改变正偏压大小, 采用多弧离子镀方法制备了新型高k栅介质——ZrO2薄膜。通过X射线衍射 (XRD) 和原子力显微镜 (AFM) 研究了在不同正偏压作用下正偏压值与薄膜的相结构、表面形貌之间的关系, 利用纳米压痕仪测量了不同正偏压作用下沉积得到的ZrO2薄膜的硬度及弹性模量, 并观察了ZrO2薄膜经不同温度退火处理后的相结构及表面形貌的变化。结果表明, 在各个正偏压条件下, 薄膜结构呈微晶或非晶;ZrO2薄膜的均方根粗糙度随着正偏压的升高而降低;正偏压为100V时硬度和弹性模量均达到最大值, 分别为16.1GPa和210GPa。Abstract: Zirconium oxide thin films as high-k gate dielectrics were deposited in vacuum cathodic arc method under different positively biased voltage.The phase structure and surface morphology were studied by means of X-ray diffraction (XRD) and atomic force microscope (AFM) , the hardness and modulus were determined by means of nanoindentation, and the influence of annealing on the thin films was also studied.The results show that the morphology of ZrO2 was characterized by microcrystalline or amorphous under different positively biased voltage, the roughness of the films decreased with positively biased voltage increased, the maxima value of their hardness and modulus are 16.1 GPa and 210 GPa respectively in the case of the positively biased voltage 100V.
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Keywords:
- High-k gate dielectrics /
- ZrO2 thin films /
- Surface roughness /
- Hardness
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