Abstract: Tantalum is used as the barrier layer in integrated circuit to prevent copper diffusing into Si layer, which results in the forming of copper silicon alloy and degrading performance of circuits. Tantalum is sputtered to si from tantalum target by method of physical vapor deposition. The grain size and texture of tantalum target can influence sputtering rate and thickness uniformity of sputtered film, so the grain size should be less than 100 μm and the texture is mainly(111) texture across the thickness.Meanwhile, purity of tantalum target should be at least 99.99% to avoid generation of particles in film. after studying systematically the key processes in manufacting of tantalum target, including electron-beam smelting, forging, rolling and heat treatment, a new manufacting technique of tantalum target which is suitable for industrialization is found, and the new product has good properties including purity, grain size and texture.