摘要:
采用射频磁控溅射法在功率用半导体散热片Mo上制备了不同本底真空度的Ru薄膜,利用能谱仪、X射线衍射仪、纳米划痕仪及电化学工作站等仪器研究了本底真空度对Ru薄膜化学成分、微观结构、膜基结合力及耐蚀性能的影响。结果表明,随着本底真空度的降低,Ru薄膜中氧含量逐渐降低,当本底真空度为6.0×10-4Pa时,薄膜中氧含量为0%(原子分数);当本底真空度为6.0×10-2Pa时,薄膜两相共存,即hcp-Ru+fcc-RuO2,此时,薄膜中RuO2的相对质量分数约为13.7%;随着本底真空度的降低,薄膜中fcc-RuO2相对质量分数逐渐减少,当本底真空度为6.0×10-4Pa时,薄膜中fcc-RuO2相消失,为hcp-Ru单一相结构;受RuO2相的影响,薄膜晶粒尺寸及膜基结合力随本底真空度的降低而逐渐增加。研究表明,在3.5%Na Cl溶液,本底真空度为6.0×10-4Pa的Ru薄膜耐蚀性能优于Mo衬底。
Abstract:
Ru films with various base pressures were deposited on the semiconductor heat sink Mo via confocal RF magnetron sputtering and the chemical composition,microstructure,adhesion strength and corrosion resistance property of the films were investigated by EDS,XRD,nano-scratch and electrochemical work station.The results showed that oxygen content in the Ru film,decreasing with the decreasing of the base pressure,was 0%(x) when the base pressure was 6.0 × 10-4Pa.When the base pressure was 6.0 × 10-2Pa,a two-phase structure,consisting of fcc-RuO2 and hcp-Ru,co-existed in the Ru film and the relative mass fraction of fcc-RuO2 in the film was 13.7%.The relative mass fraction of fcc-RuO2 in the film decreased with the decreasing of base pressure.When the base pressure was 6.0 × 10-4Pa,Ru films exhibited a single hcp-Ru structure.The grain size and adhesion strength of Ru films,both of which were influenced by the base pressure,increased with the decrease of base pressure.In addition,electrochemical experiments approved that the corrosion property of Ru film with the base pressure of 6.0 × 10-4Pa was better than that of Mo substrate.
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