Abstract: Ru films with various base pressures were deposited on the semiconductor heat sink Mo via confocal RF magnetron sputtering and the chemical composition,microstructure,adhesion strength and corrosion resistance property of the films were investigated by EDS,XRD,nano-scratch and electrochemical work station.The results showed that oxygen content in the Ru film,decreasing with the decreasing of the base pressure,was 0%(x) when the base pressure was 6.0 × 10^-4Pa.When the base pressure was 6.0 × 10^-2Pa,a two-phase structure,consisting of fcc-RuO₂ and hcp-Ru,co-existed in the Ru film and the relative mass fraction of fcc-RuO₂ in the film was 13.7%.The relative mass fraction of fcc-RuO₂ in the film decreased with the decreasing of base pressure.When the base pressure was 6.0 × 10^-4Pa,Ru films exhibited a single hcp-Ru structure.The grain size and adhesion strength of Ru films,both of which were influenced by the base pressure,increased with the decrease of base pressure.In addition,electrochemical experiments approved that the corrosion property of Ru film with the base pressure of 6.0 × 10^-4Pa was better than that of Mo substrate.