CdSe/ZnSe量子点的制备及电化学发光性能

Synthesis and Electrochemical Luminescence Characterization of CdSe/ZnSe Quantum Dots

  • 摘要: 利用ZnSe半导体纳米材料晶体结构与CdSe相似、带隙更宽的特点,采用水热法合成了核-壳型CdSe/ZnSe量子点。结果表明:温度在70~160℃时,ZnSe壳逐渐包裹在CdSe核上,反应时间在0~4 h时,内壳在核上是均匀包裹的,当核壳摩尔比为1∶3时,CdSe/ZnSe QDs的电化学发光性能最强,其电化学发光强度是CdSe量子点的6倍,且发光信号稳定。

     

    Abstract: The core-shell CdSe/ZnSe quantum dots were synthesized by hydrothermal method based on the similar crystal structure and wider band gap of ZnSe semiconductor nanomaterial. The effect of reaction temperature, reaction time and molar ratio of Cd:Zn on the synthesis of quantum dots were investigated.Resultsshowed that when the temperature was between 70~160℃, the ZnSe shell was being coated on the CdSe core. When the reaction time was between 0~4 hours, the shell could be uniformly coated on the core. When the molar ratio of core to shell was 1:3, the electrochemical luminescence performance was the best, and its electrochemical luminescence intensity was 6 times higher than that of CdSe quantum dots.

     

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