TA2钛合金表面TiNx-Cu薄膜Cu掺入量对组织及性能的影响

Effect of Cu Doping on Microstructure and Properties of TiNx-Cu Thin Films on TA2 Titanium Alloy Surface

  • 摘要: 采用热丝增强等离子体磁控溅射系统,在TA2钛合金表面制备不同Cu掺入量的TiNx-Cu薄膜,测试其硬度、耐磨性、耐蚀性及抗生物污损性能。结果表明:随着Cu靶电流从1.0 A增加至2.0 A,Cu掺入量(原子分数)从1.21%增加至24.07%,过量Cu聚集在样品表面,膜-基协同变形能力提高,但硬度和耐磨性能下降,硬度从34.8 GPa下降至3.9 GPa,磨痕宽度从375 μm增加至467 μm;少量掺入Cu可提高TA2基体的耐蚀性能,但掺入量过多时Cu离子溢出速率增大,自腐蚀电位从(89.8±3.8) mV下降至(-179.7±2.2) mV,自腐蚀电流密度升高两个数量级,导致耐蚀性能下降;当Cu靶电流为1.0 A时,Cu掺入量适宜,所制备的TiNx-Cu薄膜使TA2合金表现出良好的综合性能。

     

    Abstract: TiNx-Cu thin films with different copper contents are prepared by hot wire enhanced plasma magnetron sputtering system, and their hardness, abrasive resistances, corrosion resistances and anti-biological fouling performances are tested. When the Cu target current increases from 1.0 A to 2.0 A, the doping amount (atomic fraction) of Cu increases from 1.21% to 24.07%, and the superfluous Cu gathers on the sample surface. As a result, the film-substrate co-deformation ability is improved, and the hardness and wear-resisting property degrade, with harness decreasing from 34.8 GPa to 3.9 GPa, and the width of wear scratch increasing from 375 μm to 467 μm. Small doping amount of Cu can improve the corrosion resistance of TA2 substrate, but excess doping amount of Cu can make Cu ion’s overflow rate increase, thus the corrosion resistance decreasing, with the self-corrosion potential decreasing from (89.8±3.8) mV to (-179.7±2.2) mV, and the self-corrosion current density increasing by two orders of magnitude, thus. When the Cu target current is 1.0 A, the Cu doping amount is optimu, and the TiNx-Cu thin film can make the TA2 alloy have excellent comprehensive properties.

     

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