YANG Dong-jie, LI Li-li. Development of SiC Semiconductor Materials Industry[J]. Development and Application of Materials, 2015, 30(3): 110-114. DOI: 10.19515/j.cnki.1003-1545.2015.03.021
Citation:
YANG Dong-jie, LI Li-li. Development of SiC Semiconductor Materials Industry[J]. Development and Application of Materials, 2015, 30(3): 110-114. DOI: 10.19515/j.cnki.1003-1545.2015.03.021
YANG Dong-jie, LI Li-li. Development of SiC Semiconductor Materials Industry[J]. Development and Application of Materials, 2015, 30(3): 110-114. DOI: 10.19515/j.cnki.1003-1545.2015.03.021
Citation:
YANG Dong-jie, LI Li-li. Development of SiC Semiconductor Materials Industry[J]. Development and Application of Materials, 2015, 30(3): 110-114. DOI: 10.19515/j.cnki.1003-1545.2015.03.021
Development of SiC Semiconductor Materials Industry
This paper has described SiC semiconductor material performance advantages, prospect in application and preparation methods, and give special focus on the PVT preparation method of SiC single crystal, the development status of SiC single crystal industry at home and abroad, as well as the bottlenecks were analyzed and the development trends of SiC materials industry was prospected.
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