Abstract: Anodic bonding process between K₄ glass and silicon sheet is described. Effecf of bonding temperature and voltage on anodic bonding is investigated,and mechanism of anodic bonding is analyzed. The results indicate that good bonding could be realized under proper temperature and voltage conditions.The good bonding between K₄ glass and silicon sheet by low temperature field assisted process is attributed to the ionic transport property of K₄ glass.High bonding percentage is achieved at temperature of 300~400℃,voltage of 700~800V,and the strength of the joint is higher than that of K₄ glass or silicon.