Study on DC Magnetron Sputtering Coating Process of ITO Target
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摘要: 对ITO靶材的直流磁控溅射工艺进行研究,通过正交试验方法确定制备ITO薄膜的最优工艺参数,并明确了溅射温度、氧氩比、溅射气压和溅射功率密度对ITO薄膜电阻率和可见光透过率的影响规律。最优工艺参数为溅射温度370℃,氧氩比0.5/40,溅射气压0.4 Pa,溅射功率密度0.17 W/cm2。薄膜电阻率受各因素影响的主次顺序是:氧氩比>溅射温度>溅射气压>溅射功率密度。薄膜可见光透过率受各因素影响的主次顺序为:溅射温度>溅射气压>氧氩比>溅射功率密度。Abstract: The DC magnetron sputtering process of ITO target was studied. The optimal process parameters were determined by orthogonal test method, and the effects of sputtering temperature, oxygen-argon ratio, sputtering pressure and sputtering power density on resistivity and visible light transmittance of ITO films were investigated. The optimal sputtering temperature was 370 ℃,the optimal oxygen-argon ratio 0.5/40, the optimal sputtering pressure 0.4 Pa, and the optimal sputtering power density 0.17 W/cm2. The resistivity of ITO films was affected by various factors, the order of priority was oxygen-argon ratio, sputtering temperature, sputtering pressure and sputtering power density. The priority order of factors affecting the visible light transmittance of ITO films was sputtering temperature, sputtering pressure, oxygen-argon ratio and sputtering power density.
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Key words:
- ITO target /
- ITO film /
- DC magnetron sputtering
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